30G120ASW IGBT (USED)
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The 30G120SW is a high-performance Insulated Gate Bipolar Transistor (IGBT), commonly used in high-power inverter and switching applications, such as the full-bridge stage of the low-frequency inverter.
Its core specifications are:
Type: IGBT (N-Channel).
Voltage Rating (V_CE):1200 V (Collector-Emitter breakdown voltage).
Current Rating (I_C):30 A (Nominal continuous collector current).
Switching Speed: High-speed switching optimized for soft-switching or medium-frequency hard-switching applications (up to approximately 20kHz).
Package: Typically TO-247 or similar isolated package.
Function: It is a critical component for converting the DC bus voltage (derived from the 48 V battery bank, stepped up by the transformer) into a high-power AC output waveform. It provides fast, low-loss switching at high power levels.