55NM60AD RUGGED MOSFET (USED)
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The 55NM60AD is a high-voltage N-Channel Power MOSFET used for switching applications, relevant to the power electronics that interface with or are driven by the transformer in the inverter system. It's a high-performance component often selected for its low loss characteristics.
Here are its core specifications:
Type: N-Channel Power MOSFET.
Voltage Rating (V_DS):600 V (Drain-Source Breakdown Voltage).
Continuous Drain Current (I_D):55 A (High current capability).
On-Resistance (R_DS(on)): Very Low, typically around 0.05, which is excellent for minimizing heat generation and maximizing efficiency (highly relevant to the "Efficiency" and "Temperature Rise" sections in the Canvas).
Package: Usually packaged in TO-247 or a similar high-power package.
Function in Inverter: This MOSFET is ideally suited for the high-frequency DC-DC boost stage that converts the low 48V battery voltage up to the high DC bus voltage (e.g., 380V DC) before the final low-frequency AC conversion. Using such a robust component ensures the system meets the high efficiency and low heat targets mentioned in the Canvas