FHA20N50 MOSFET (USED)
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The FHA20N50 is a common high-voltage N-Channel Power MOSFET used for switching applications, often in power factor correction (PFC) stages or in high-frequency DC-DC converters, which could precede the low-frequency stage of the inverter mentioned in the Canvas.
Here are its core specifications:
Type: N-Channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
Drain-Source Breakdown Voltage (V_DS):500 V.
Continuous Drain Current (I_D):20 A (at 25C).
On-Resistance (R_DS(on)): Low resistance, typically less than 0.27, which minimizes conduction losses.
Package: Commonly provided in a TO-3P or similar robust through-hole package for high power dissipation.
Application Relevance: the FHA20N50 (MOSFET) would be well-suited for any internal high-speed switching tasks, especially in power supplies or initial voltage boost/pre-regulation circuits where its fast switching speed and low on-resistance are beneficial