GW39NC60VD MOSFET (USED)

The GW39NC60VD is a highly efficient, high-voltage N-Channel Power MOSFET which is directly relevant to meeting these standards due to its robust design and low loss.

Here are its core specifications:

• Type: N-Channel Power MOSFET.

• Voltage Rating (V_DS):600 V (Drain-Source Breakdown Voltage). This high voltage rating is essential for safety and reliability on the high DC bus voltage rail in the inverter, supporting the need for high dielectric strength mentioned in the Canvas.

• Continuous Drain Current (I_D):39 A (High continuous current capability).

• On-Resistance (R_DS(on)): Low, typically around $0.07, which significantly reduces power loss and heat generation. Minimizing heat is key to meeting the required 120C protection threshold.

• Package: Usually the TO-247 package, which is designed for high thermal dissipation.