K75T60 RUGGED IGBT (USED)

The K75T60 is a powerful Insulated Gate Bipolar Transistor (IGBT). This component is highly relevant to the safety and reliability of the inverter, as the compliance section mandates robust isolation and thermal protection. The K75T60 would likely be used in the high-current switching stage.

Here are its core specifications:

• Type: IGBT (N-Channel).

• Voltage Rating (V_CE):600 V (Collector-Emitter Breakdown Voltage).

• Current Rating (I_C):75 A (Very high continuous collector current capability at 25C).

• Switching Speed: High-speed switching, optimized for fast and efficient operation in inverter bridges, which directly contributes to the > 95% efficiency target mentioned earlier in the Canvas.

• Package: Typically TO-247 or a similar high-power package, designed for mounting onto a heat sink to manage the < 65C temperature rise.

• Function in Inverter: This IGBT is a primary candidate for the final low-frequency AC synthesis stage (or the DC-DC boost stage) of the 7.5 kVA inverter, handling the massive 156A current from the secondary side of the transformer. Its high current rating ensures reliability and helps meet the specified thermal protection requirements

• High Frequency Inverter: 5kva high frequency inverter uses this robust IGBT at the SPWM side